Solid-state image pickup device

ABSTRACT

A solid-state image pickup device includes a photoelectric conversion portion for generating signal electric charges in accordance with an amount of incident light, a plurality of color filters, and a flattening layer formed on the plurality of color filters. A thickness of a projection or a recess on a surface of the flattening layer, provided on a region where color filters are adjacent to each other, is equal to or less than 0.2 μm.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state image pickup deviceincluding color filters for photographing a color image.

2. Description of the Related Art

A configuration shown in FIG. 4 has been known for a conventionalsolid-state image pickup device used in a color video camera, a colorstill-image camera, or the like.

FIG. 4 is a side cross-sectional view illustrating the structure of apixel of the conventional solid-state image pickup device, in which aphotoelectric conversion portion 2 for generating signal electriccharges in accordance with the amount of incident light is provided at aportion near the surface of a semiconductor substrate 1. Thephotoelectric conversion portion 2 is provided for each of a pluralityof pixels arranged in the form of a grid. An active device (not shown)is formed on the semiconductor substrate 1 together with thephotoelectric conversion portion 2.

A first interlayer insulating film 3, for example, made of SiO₂, havingan aperture facing the photoelectric conversion portion 2 is depositedon the semiconductor substrate 1, and a first wiring 4 obtained bypatterning an Al (aluminum) film or the like to a desired shape isformed on the first interlayer insulating film 3. A second interlayerinsulating film 5, a second wiring 6, a third interlayer insulating film7, and a third wiring 8 are sequentially formed on the first interlayerinsulating film 3 in accordance with a circuit pattern.

These interlayer insulating films and wirings do not necessarily have athree-layer structure, but may have a two-layer structure, asingle-layer structure or a structure having at least four layers.

A protective film 9, for example, made of SiON is deposited on the thirdinterlayer insulating film 7 so as to cover also the third wiring 8. Afirst flattening layer 10, for example, made of acrylic resin isdeposited on the protective film 9.

A color filter 11 for performing color separation for incident light inaccordance with respective pixels is provided on the first flatteningfilm 10. The color filter 11 is formed using a photoresist includingpigments of three primary colors, i.e., red (R), green (G) and blue (B).

A second flattening layer 12 having a light transmitting property isdeposited on the color filters 11, and a microlens 13, serving as acondenser lens for condensing incident light onto the photoelectricconversion portion 2, is formed on the second flattening layer 12.

As described in Japanese Patent Application Laid-Open (Kokai) No. 5-6849(1993), in a solid-state image pickup device having a large chip size,since a pattern forming region is larger than an exposable range at asingle exposure operation by an exposure apparatus, divided exposure isadopted in which the pattern forming region is divided into a pluralityof exposure regions, and a desired pattern is formed by combiningdivided patterns.

In recent solid-state image pickup devices, a case in which adjacentcolor filters are formed in an overlapped state or a case in which a gapis produced between adjacent color filters sometimes occurs due tovariations in the sizes of color filters or deviations in the positionsof color filters as a result of large-scale integration. Furthermore,since corner portions of a color filter have a circular shape due toinsufficient resolution of an exposure apparatus, a space where a colorfilter is not formed is produced at such a corner portion. For example,as disclosed in Japanese Patent Application Laid-Open (Kokai) No.10-209410 (1998), in order to prevent overlap of color filters and a gapbetween color filters, there is a method of removing a gap betweenadjacent color filters by sequentially superposing three types of colorfilters and then removing upper color filters until the lowermost colorfilter is exposed.

In this method, however, it is impossible to adjust the thickness ofeach of the R, G and B color filters in order to adjust differences inlight transmittance. Furthermore, it is very difficult to perform aprocess of removing color filters by performing uniform etching over alarge area.

FIG. 5 assumes a case of forming a solid-state image pickup device 14 bydividing it into two exposure regions, i.e., a first exposure region 15and a second exposure region 16. In this case, as shown in FIGS. 6A and6B, the amount of overlap and the size of a gap between color filtersdue to deviations in the positions of color filters sometimes differbetween the first exposure region 15 and the second exposure region 16.

In such a case, the surface of the second flattening layer formed on thecolor filters is not sufficiently flattened, resulting in the formationof projections or recesses at overlapped portions or gap portions amongcolor filters.

For example, as shown in FIGS. 7A and 7B, recesses in the secondflattening layer produced at gap portions between color filters disperseincident light by operating in the same manner as lenses. As a result,light passing through a color filter reaches a photoelectric conversionportion, resulting in variations in the amount of incident light amongpixels. Furthermore, since light passing through a gap between colorfilters sometimes reaches a photoelectric conversion portion by beingreflected by wirings or the like, a photographed image degrades.

When color filters overlap, the amount of incident light reaching aphotoelectric conversion portion decreases because incident light passesthrough thick color filters, and variations in the amount of incidentlight occur among pixels.

Particularly, when forming color filters according to theabove-described divided exposure, then, as shown in FIGS. 7A and 7B,since the amount of overlap of color filters or the amount of a gapbetween color filters differ between the first exposure region and thesecond exposure region, the height of a projection or a recess producedon the surface of the second flattening layer also differs. As a result,pronounced variations in the amount of incident light appear in aphotographed image.

SUMMARY OF THE INVENTION

It is an object of the present invention to solve the above-describedproblems in the prior art.

It is another object of the present invention to provide a solid-stateimage pickup device in which degradation of a photographed image isprevented by suppressing variations in the amount of light incident upona photoelectric conversion portion.

According to one aspect, the present invention which achieves theabove-described objects relates to a solid-state image pickup deviceincluding a photoelectric conversion portion for generating signalelectric charges in accordance with an amount of incident light, aplurality of color filters, and a flattening layer formed on theplurality of color filters to a thickness so that a projection or arecess on a surface of the flattening layer generated by overlap ofadjacent color filters or a gap between adjacent color filters does notinfluence a photographed image.

It is desirable that a thickness, that is a height or depth of theprojection or the recess, on the surface of the flattening layer isequal to or less than 0.2 μm.

According to another aspect, the present invention relates to asolid-state image pickup device including a photoelectric conversionportion for generating signal electric charges in accordance with anamount of incident light, a plurality of color filters, and a condenserlens, having a shape to cause the incident light to pass through aregion of a color filter having a uniform spectral characteristic, forcondensing the incident light onto the photoelectric conversion portion.

It is desirable that the condenser lens has a shape to cause theincident light to pass through a region of a color filter having auniform thickness, and that the condenser lens has a shape to cause anoutermost optical path of the incident light to coincide with a surfaceof the color filter facing the condenser lens, at an inner position of0.1 L-0.25 L from the edges of a pixel, where L represents a pixeldiameter.

The solid-state image pickup device may further include a wiring layerformed between the photoelectric conversion portion and the plurality ofcolor filters, wherein the wiring layer includes a wiring disposed so asnot to cross an outermost optical path of the incident light.

The plurality of color filters may be formed according to dividedexposure in which the solid-state image pickup device is divided into aplurality of exposure regions, and the color filters may be formed usinga divided exposure method in which a desired pattern is formed bycombining patterns of the divided exposure regions.

In the solid-state image pickup device having the above-describedconfiguration, by providing a flattening layer formed on the pluralityof color filters to a thickness so that a projection or a recess on asurface of the flattening layer generated by overlap of adjacent colorfilters or a gap between adjacent color filters does not influence aphotographed image, variations in the amount of incident light onto thephotoelectric conversion portion due to the shape of the flatteninglayer are reduced, resulting in reduction of variations in the amount ofincident light among pixels. In addition, by providing a condenser lens,having a shape to cause the incident light to pass through a region of acolor filter having a uniform spectral characteristic, variations in theamount of incident light on the photoelectric conversion portion due tothe characteristics of the color filters are reduced, resulting inreduction of variations in the amount of incident light among pixels.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side cross-sectional view illustrating the configuration ofa solid-state image pickup device according to a first embodiment of thepresent invention;

FIG. 2 is a side cross-sectional view illustrating the configuration ofa solid-state image pickup device according to a second embodiment ofthe present invention;

FIG. 3 is a graph illustrating the relationship between the height ordepth of a projection or a recess produced on the surface of a secondflattening layer and the thickness of the second flattening layer;

FIG. 4 is a side cross-sectional view illustrating the configuration ofa conventional solid-state image pickup device;

FIG. 5 is a plan view illustrating a solid-state image pickup devicesubjected to divided exposure;

FIGS. 6A and 6B are plan views, each illustrating position deviationamong color filters of the solid-state image pickup device shown in FIG.5; and

FIGS. 7A and 7B are side cross-sectional views, each illustratingposition deviation between color filters of the solid-state image pickupdevice shown in FIG. 5.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described with reference to thedrawings.

FIG. 1 is a side cross-sectional view illustrating the configuration ofa solid-state image pickup device according to a first embodiment of thepresent invention. FIG. 2 is a side cross-sectional view illustratingthe configuration of a solid-state image pickup device according to asecond embodiment of the present invention.

As shown in FIG. 1, in the solid-state image pickup device of the firstembodiment, a second flattening layer 22 deposited on a color filter 11is formed to be thicker than in the conventional case, so that theamount of a projection or a recess produced on the surface of the secondflattening layer 22 is sufficiently small. More specifically, thethickness of the second flattening layer 22 is set so that the height ordepth of a projection or a recess produced on the surface of the secondflattening layer 22 is equal to or less than 0.2 μm.

In this configuration, since variations in the amount of incident lightonto a photoelectric transducer 2 due to the shape of the secondflattening layer 22 are reduced, variations in the amount of incidentlight among pixels are reduced, thereby preventing degradation of aphotographed image.

In the solid-state image pickup device of the second embodiment, theshape of a microlens 23 is set so that incident light onto aphotoelectric conversion portion does not pass through an overlappedportion of color filters. More specifically, as shown in FIG. 2, thediameter and the thickness of the microlens 23 are set so that anoutermost optical path of the incident light coincides with the uppersurface of a color filter 11, at an inner position of 0.1 L-0.25 L fromthe edges of a pixel, where L represents a pixel diameter.

In this configuration, since variations in the amount of incident lightonto a photoelectric conversion portion 2 due to the characteristic ofthe color filter 11 are reduced, variations in the amount of incidentlight among pixels are reduced, thereby preventing degradation of aphotographed image.

Particularly, if the configuration of the first or second embodiment isapplied to a solid-state image pickup device in which color filters areformed using divided exposure, since variations in the amount ofincident light between divided regions are reduced, degradation of aphotographed image is further prevented.

Since other components are the same as in the conventional solid-stateimage pickup device shown in FIG. 4, further description thereof will beomitted. In FIGS. 1 and 2, the same components as those in theconventional device are indicated by the same reference numerals.

Although in FIGS. 1 and 2, the microlens 23 and the color filter 11 areseparately provided, the microlens 23 may have the function of the colorfilter 11.

Next, a description will be provided of a specific method formanufacturing the solid-state image pickup device of the firstembodiment with reference to the drawings.

Usually, PGMA (polyglycidyl methacrylate), PMMA (polymethylmethacrylate), polyimide or the like is used as a material for thesecond flattening layer 22 formed on the color filter 11 shown in FIG.1.

In the first embodiment, solid-state image pickup devices in which therespective second flattening layers 22 have thicknesses of 0.5 μm, 1.0μm and 1.5 μm were formed. At that time, the depths of recesses producedon the respective second flattening layers 22 were 0.31 μm, 0.21 μm and0.10 μm. FIG. 3 illustrates the relationship between the height or depthof the projection or the recess produced on the surface of the secondflattening layer 22 and the thickness of the second flattening layer 22.The refractive index nD of the second flattening layer 22 used in thefirst embodiment was 1.55.

Microlenses 23 were formed on the respective second flattening layers 22having the different thicknesses, to provide three types of solid-stateimage pickup devices. The structure from the semiconductor substrate 1to the color filter 11 including wirings and interlayer insulating filmsare the same as in the conventional configuration shown in FIG. 4.

Photographing operations were performed using the above-described imagepickup devices. It was confirmed that a voltage difference between pixelsignals from adjacent exposure regions formed by divided exposure causesno problems in the picture quality if the projection or the recess onthe second flattening layer 22 is set to be equal to or less than 0.2 μmwithin a pixel region. That is, the thickness of the second flatteninglayer 22 may be set to at least 1.0 μm.

Since the present invention has the above-described configuration, thefollowing effects are obtained.

By providing a flattening layer formed on a plurality of color filtersto a thickness so that a projection or a recess on a surface of theflattening layer generated by overlap of adjacent color filters or a gapbetween adjacent color filters does not influence a photographed image,variations in the amount of incident light on the photoelectricconversion portion due to the shape of the flattening layer are reduced,resulting in reduction of variations in the amount of incident lightamong pixels, and prevention of degradation of a photographed image. Inaddition, by providing a condenser lens, having a shape to cause theincident light to pass through a region of a color filter having auniform spectral characteristic, variations in the amount of incidentlight on the photoelectric conversion portion due to the characteristicsof the color filters are reduced, resulting in reduction of variationsin the amount of incident light among pixels, and prevention ofdegradation of a photographed image.

Particularly, in the configuration in which color filters are formedaccording to divided exposure, since variations in the amount ofincident light between divided regions are reduced, degradation of aphotographed image is more effectively prevented.

The individual components shown in outline in the drawings are all wellknown in the solid-state image pickup device arts and their specificconstruction and operation are not critical to the operation or the bestmode for carrying out the invention.

While the present invention has been described with respect to what arepresently considered to be the preferred embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments. To the contrary, the present invention is intended to covervarious modifications and equivalent arrangements included within thespirit and scope of the appended claims. The scope of the followingclaims is to be accorded the broadest interpretation so as to encompassall such modifications and equivalent structures and functions.

1. A solid-state image pick-up device comprising: a photoelectricconversion portion for generating signal electric charges in accordancewith an amount of incident light; a plurality of color filters; and aflattening layer formed on said plurality of color filters, wherein athickness of a projection or a recess on a surface of said flatteninglayer, provided on a region where color filters are adjacent to eachother, is equal to or less than 0.2 μm. 2.-9. (canceled)